j , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SA505 description ? collector-emitter breakdown voltage- v(br)ceo= -50v (min.) ? collector-emitter saturation voltage- vce(sa.r -0.8v (max.)? lc= -500ma applications ? designed for medium power amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ie pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous emitter current-continuous collector power dissipation junction temperature storage temperature range value -60 -50 -5.0 -1 1 1 150 -55-150 unit v v v a a w ?c ?c pin 1. emitter 2.collector 3. base to-126 package h- r \ - t" d-f -*? g -b? '^ $_-6 if 1 g ?? i ? 4 2 3 dim a b c d f g h j k 0 r v ir q t v ?"?- 3 m min 1070 770 2,60 0,66 3.10 4,48 2,00 1.35 15.30 3.70 0,40 1.17 -h( f ? a v , i. k f m max 10.95 7.90 2.80 0.86 3,30 4..s8 2..20 1.55 16.30 3.90 0.60 1,37 zf- -; r*-j ?*-r nj semi-conductors reserves the right to change test conditions, parameter limits and packaue dimensions without notice. information furnished by n.i semi-conductors is believed to be both accurate and reliable at the time of going to press. inmever. n.i semi-condnctors assumes no responsibility for any errors or omissions discovered in its use. " nj semi-conductors encourages customers to verity that datasheets are current before placing orders. qualify semi-conductors
silicon pnp power transistor 2SA505 electrical characteristics tc=25x; unless otherwise specified symbol v(br)ceo v(br)ebo vce(sat) vbe(oii) icbo iebo hpe-1 hfe-2 fl cob parameter collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product output capacitance conditions lc=-10ma; ib= 0 ie= -1 ma; lc= 0 lc= -500ma; ib= -50ma lc= -500ma; vce= -2v vcb= -30v; ie= 0 veb= -5; lc= 0 lc= -50ma; vce= -2v lc= -800ma; vce= -2v lc=-10ma;vce=-10v le=0;vcb=-10v;f= 1.0mhz min -50 -5 40 13 typ. 100 20 max -0.8 -1.3 -1.0 -1.0 240 unit v v v v ua ma mhz pf ? hpe-1 classifications r 40-80 0 70-140 y 120-240
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